Ion Implantation and Beam Processing

Author: J. S. Williams
Publisher: Academic Press
ISBN: 1483220648
Format: PDF, Mobi
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Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Ion Beam Processing of Materials and Deposition Processes of Protective Coatings

Author: P.L.F. Hemment
Publisher: Newnes
ISBN: 0444596313
Format: PDF
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Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation. Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.

Laser and Electron Beam Processing of Materials

Author: C.W. White
Publisher: Elsevier
ISBN: 0323142532
Format: PDF, ePub, Docs
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Laser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society. The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed. Metallurgists, engineers, and materials scientists will find the book very insightful.

Ion Beam Processing

Author: G. K. Hubler
Publisher:
ISBN:
Format: PDF, ePub, Mobi
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This memo introduces ion implantation processing. The introduction and background sections present applications that might be considered for ion implantation processing and give a brief description of the apparatus and the physical principles underlying the techniques. The entire process of ion beam processing is described to allow the reader to plan treatment parameters for parts and/or to double check treatment parameters recommended by vendors. This document provide workers in the field with a handbook of tables, graphs and equations that are needed for doing ion implantation processing. These include tables of ion ranges and straggling, formulae and tables which allow estimates to be simply made for sputtering coefficients, depth profiles of implanted elements, damage profiles, dose for sputter saturation of implanted profiles, temperatures reached by parts in vacuum during implantation, and estimates of the time and cost of ion implantation. Keywords: Ion implantation; Surface modification; Ion beam analysis; Ion beam processing; Corrosion; Ion Range; Sputtering; Materials processing; Applications of ion implantation; Wear; Straggling; Alloy formation; Tribology.

Materials Processing by Cluster Ion Beams

Author: Isao Yamada
Publisher: CRC Press
ISBN: 1498711766
Format: PDF, ePub, Mobi
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Materials Processing by Cluster Ion Beams: History, Technology, and Applications discusses the contemporary physics, materials science, surface engineering issues, and nanotechnology capabilities of cluster beam processing. Written by the originator of the gas cluster ion beam (GCIB) concept, this book: Offers an overview of ion beam technologies, from the discovery of monomer ions to the introduction of GCIBs Explores the development of sources for producing cluster beams from solid materials Describes the engineering characteristics of gas cluster ion beam equipment Covers cluster ion-solid surface interaction kinetics as well as sputtering, implantation, and ion-assisted deposition Details surface processing techniques for smoothing, shallow implantation, and preparation of high-quality thin films Introduces representative examples of emerging GCIB industrial applications Materials Processing by Cluster Ion Beams: History, Technology, and Applications provides a deeper understanding of the importance of cluster ion beams and their applications.

Ion Implantation and Synthesis of Materials

Author: Michael Nastasi
Publisher: Springer Science & Business Media
ISBN: 3540452982
Format: PDF
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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

High Energy and High Dose Ion Implantation

Author: S.U. Campisano
Publisher: Elsevier
ISBN: 0444596798
Format: PDF, ePub, Docs
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Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.

New Trends in Ion Beam Processing of Materials and Beam Induced Nanometric Phenomena

Author: J. K. N. Lindner
Publisher: Elsevier Science
ISBN: 9780444205063
Format: PDF, ePub, Docs
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Part I of this book is dedicated to the proceedings of symposium I of the EMRS 1996 Spring Meeting. This Symposium on "New Trends in Ion Beam Processing of Materials" was held in Strasbourg (France) from the 4th to the 7th of June 1996. Ion- beam processing represents a particularly powerful tool to modify and synthesise materials such as semiconductors, metals, dielectrics, and ceramics, In particular, the continuous development of the semiconductor industry, with the consequent shrinkage of device dimensions, is placing severe constraints on ion-beam processing with demands for keV and meV energy beams, high doses, and unprecedented control over contamination, beam purity, and divergence. These requirements are posing new challenges to the ion-beam community, ranging from fundamental processes (such as defect generation, defect-defect interactions, phase transitions) to engineering (such as process control and novel equipment). The aim of this Symposium was to provide an international forum for the presentation and discussion of new work in the field of ion-beam processing. More than a hundred papers were presented by scientists from all over the world. particular emphasis was given to new trends in ion-beam processing of semiconductors and to the current challenges faced by microelectronic device manufacturing. The fields of transient- enhanced diffusion, gettering, optoelectronic applications, group IV hetero epitaxy, damage, annealing, and synthesis were treated in detail. The interaction between the semiconductor and other communities is important for the development of new concepts and presentations in the field of metals, insulators, and new techniques (such as plasma-immersion ion implantation) were extremely interesting. Part II is dedicated to the proceedings of symposium K. This symposium has focused on modifications of the structure and properties of materials which are induced by several kinds of irradiations: on the one hand high energy deposited in the electrons which relax their energy to the lattice (fs lasers, heavy ions in the GeV energy range, cluster beams in the MeV range) and on the other hand energy deposited directly on the lattice atoms (heavy ions and cluster beams in the keV energy range). The idea was to emphasize the link between the material modifications on a nanometric scale and the energy input on the fs time scale from both the experimental and theoretical point of view. To reach these goals our attention was focused on single event effects: single fs laser shots, single ion and cluster tracks (low and high energy).